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N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

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N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

Brand Name : JEUNKEI

Model Number : JY11M

Certification : ISO9001,CE

Place of Origin : China

MOQ : 50pcs ( sample available)

Price : USD0.5-USD1/PC

Payment Terms : T/T, , Western Union, Paypal

Supply Ability : 1000pcs per day

Delivery Time : depend on the order quantity /Negotiable

Packaging Details : Suite for export

Name : N Channel MOSFET

Model No. : JY11M

Type : N Channel

Drain-Source Voltage : 100V (Tc=25℃）

Gate-Source Voltage : ±20V

Continuous Drain Current : 110A(Tc=25℃）

Max Power Dissipation : 210W

Operating Junction and Storage Temperature Range : -55~+175℃

Reverse body recovery : Yes

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General Description:


The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Features:

● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

Applications:

● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems

PIN Description:

N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

Absolute Maximum Ratings( Tc=25℃ Unless Otherwise Noted):

Symbol Parameter Limit Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current TC=25℃ 110 A
TC=100℃ 82
IDM Pulsed Drain Current 395 A
PD Maximum Power Dissipation 210 W
TJTSTG Operating Junction and Storage Temperature Range -55~+175 ℃
RΘJC Thermal Resistance-Junction to Case 0.65 ℃/W
RθJA
Thermal Resistance-Junction to Ambient 62

TO220-3 Package Outline:

N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

Symbol mm inch Symbol mm inch
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 1.40 1.50 1.60 0.055 0.059 0.063
A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC
A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC
b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260
b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519
C 0.48 0.50 0.52 0.019 0.020 0.021 L1 - - 3.95 - - 0.156
D 15.40 15.60 15.80 0.606 0.614 0.622 L2 2.50REF. 0.098REF.
D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143
DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113
E 9.70 9.90 10.10 0.382 0.389 0.398 Θ1 5° 7° 9° 5° 7° 9°
E1 - 8.7 - - 0.343 - Θ2 1° 3° 5° 1° 3° 5°
E2 9.80 10.00 10.20 0.386 0.94 0.401

For more information, please directly contact with us via email: ivanzhu@junqitradinig.com


Product Tags:

enhancement mode power mosfet N Channel

      

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