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Brand Name : JEUNKEI
Model Number : JY4N8M
Certification : ISO9001,CE
Place of Origin : China
MOQ : 50pcs ( sample available)
Price : USD0.5-USD1/PC
Payment Terms : T/T, , Western Union, Paypal
Supply Ability : 30000pcs per month
Delivery Time : depend on the order quantity /Negotiable
Packaging Details : Suite for export
Name : Power MOSFET
Model No. : JY4N8M
Type : N Channel
Drain-Source Voltage : 40V
Gate-source Voltage : ±20V
Continuous Drain Current : 80A (Tc=25℃)
Pulsed Drain Current : 350A
Max Power Dissipation : 80W
Reverse body Recovery : Yes
General Description:
Features:
The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Applications:
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
PIN Description:
Absolute Max Ratings(Tc=25℃ Unless Otherwise Noted)
Symbol | Parameter | Limit | Unit | |
VDS | Drain-Source Voltage | 40 | V | |
VGS | Gate-Source Voltage | ±20 | V | |
ID | Continuous Drain Current | Tc=25℃ | 80 | A |
Tc=100℃ | 55 | |||
IDM | Pulsed Drain Current | 350 | A | |
PD | Maximum Power Dissipation | 80 | W | |
TJTSTG | Operating Junction and Storage Temperature Range | -55~+175 | ℃ | |
RΘJC | Thermal Resistance-Junction to Case | 1.88 | ℃/W | |
RΘJA | Thermal Resistance-Junction to Ambient | 92 |
Package Outline:
Symbol | Dimensions in Millimeters | Dimensions in inches | ||
Min. | Max. | Min. | Max. | |
A | 2.200 | 2.400 | 0.087 | 0.094 |
A1 | 0.000 | 0.127 | 0.000 | 0.005 |
b | 0.660 | 0.860 | 0.026 | 0.034 |
c | 0.460 | 0.580 | 0.018 | 0.023 |
D | 6.500 | 6.700 | 0.256 | 0.264 |
D1 | 5.100 | 5.460 | 0.201 | 0.215 |
D2 | 0.483TYP. | 0.190 TYP. | ||
E | 6.000 | 6.2000 | 0.236 | 0.244 |
e | 2.186 | 2.386 | 0.086 | 0.094 |
L | 9.800 | 10.400 | 0.386 | 0.409 |
L1 | 2.900 TYP | 0.114 TYP. | ||
L2 | 1.400 | 1.700 | 0.055 | 0.067 |
L3 | 1.600 TYP | 0.063 TYP. | ||
L4 | 0.600 | 1.000 | 0.024 | 0.039 |
ø | 1.100 | 1.300 | 0.043 | 0.051 |
Θ | 0° | 8° | 0° | 8° |
h | 0.000 | 0.300 | 0.000 | 0.012 |
v | 5.350 TYP. | 0.211 TYP. |
For More products information, please directly contact with us via email: ivanzhu@junqitrading.com
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40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M Images |